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ON Semiconductor )
Plastic NPN Silicon High-Voltage Power Transistor
. . . designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.
2N5655 2N5657
0.5 AMPERE POWER TRANSISTORS NPN SILICON 250-350 VOLTS 20 WATTS
* Excellent DC Current Gain - *
hFE = 30-250 @ IC = 100 mAdc Current-Gain - Bandwidth Product - fT = 10 MHz (Min) @ IC = 50 mAdc
PD, POWER DISSIPATION (WATTS)
II II IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II I I II IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS (1)
Rating Symbol VCEO VCB VEB IC IB 2N5655 250 275 2N5657 350 375 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 6.0 0.5 1.0 Collector Current - Continuous Peak Base Current 0.25 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 20 0.16 Watts W/_C _C TJ, Tstg -65 to +150
32 1
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-09 TO-225AA TYPE
THERMAL CHARACTERISTICS
Characteristic
Symbol JC
Max
Unit
Thermal Resistance, Junction to Case
6.25
_C/W
(1) Indicates JEDEC Registered Data. 40
30
50 mH
20
Hg RELAY +
X 200 TO SCOPE 6.0 V Y 300 50 V + -
10
0
1.0
25
50
75 100 TC, CASE TEMPERATURE (C)
125
150
Figure 1. Power Derating
Figure 2. Sustaining Voltage Test Circuit
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
(c) Semiconductor Components Industries, LLC, 2002
1
April, 2002 - Rev. 7
Publication Order Number: 2N5655/D
2N5655 2N5657
IC, COLLECTOR CURRENT (AMP)
II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min 250 350 250 350 - - - - - - - - - Max - - - - Unit Vdc Vdc Collector-Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) 2N5655 2N5657 2N5655 2N5657 2N5655 2N5657 VCEO(sus) V(BR)CEO ICEO mAdc 0.1 0.1 0.1 0.1 1.0 1.0 10 10 10 Collector Cutoff Current (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) Collector Cutoff Current (VCB = 275 Vdc, IE = 0) (VCB = 375 Vdc, IE = 0) ICEX mAdc 2N5655 2N5657 2N5655 2N5657 2N5655 2N5657 ICBO Adc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) DC Current Gain (1) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 250 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) IEBO hFE Adc - ON CHARACTERISTICS 25 30 15 5.0 - - - - - 250 - - 1.0 2.5 10 1.0 - - Collector-Emitter Saturation Voltage (1) (IC = 100 mAdc, IB = 10 mAdc) (IC = 250 mAdc, IB = 25 mAdc) (IC = 500 mAdc, IB = 100 mAdc) VCE(sat) Vdc Base-Emitter Voltage (1) (IC = 100 mAdc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS VBE fT Cob hfe Vdc Current-Gain - Bandwidth Product (2) (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) 10 - 20 MHz pF - 25 Small-Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data for 2N5655 Series. (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. (2) fT is defined as the frequency at which |hfe| extrapolates to unity. 1.0 0.5 TJ = 150C 1.0 ms d c Second Breakdown Limit Thermal Limit @ TC = 25C Bonding Wire Limit Curves apply below rated VCEO 2N5655 2N5657 20 30 40 60 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 600 10 s 500 s 0.2 0.1 0.05 0.02 0.01
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 3. Active-Region Safe Operating Area
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2N5655 2N5657
300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 1.0 -55C TJ = +150C +100C +25C VCE = 10 V VCE = 2.0 V
2.0
3.0
5.0
7.0
10
20 30 50 IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
Figure 4. Current Gain
1.0 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 0 VCE(sat) @ IC/IB = 10 IC/IB = 5.0 10 20 TJ = +25C 500 VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V
300 200 C, CAPACITANCE (pF) 100 70 50 30 20 10 0.1 Cob Cib TJ = +25C
30 50 100 200 300 IC, COLLECTOR CURRENT (mA)
0.2
0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 5. "On" Voltages
Figure 6. Capacitance
10 5.0 2.0 1.0 t, TIME ( s) 0.5 0.2 0.1 0.05 0.02 0.01 1.0 2.0 td tr
IC/IB = 10 VCC = 300 V, VBE(off) = 2.0 V (2N5657, only) VCC = 100 V, VBE(off) = 0 V t, TIME ( s)
10 5.0 2.0 1.0 0.5 0.2 VCC = 300 V (Type 2N5657, only) 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 500 tf VCC = 100 V IC/IB = 10
ts
5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA)
200
500
0.1 1.0
Figure 7. Turn-On Time
Figure 8. Turn-Off Time
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2N5655 2N5657
PACKAGE DIMENSIONS
TO-225AA CASE 77-09 ISSUE W
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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2N5655/D

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